S70GL02GS11FHI010

S70GL02GS11FHI010 is a 2GB CMOS flash non-volatile memory, manufactured with 65nm MirrorBit Eclipse process technology. The device provides a fast page access time of 25ns, and the corresponding random access time is 110ns. It has a write buffer that allows up to 256 words/512 bytes to be programmed in one operation, which has a faster effective programming time than standard single-byte/word programming algorithms.

1. Multi-function I/O function-1.65V to VCC wide I/O voltage (VIO)

2. Sector Erase-Unified 128kB sector

3. Suspend and resume commands for programming and erasing operations

4. Status register, data polling and ready/busy pin methods to determine device status

5. Advanced sector protection-volatile and non-volatile protection methods for each sector