TPH1R306PL Silicon N-channel MOSFETs The TPH1R306PL MOSFET is an N-channel compact 60V SMD high-efficiency, high-speed switching MOSFET that has an ultra-low typical on-resistance (RDS(ON) of just 1.0mΩ (@VGS = 10V). It can achieve "best- RDS( ON) and output capacitance/output charge, further improving system performance and efficiency by increasing switching speed and reducing switching losses. TPH1R306PL MOSFETs are suitable for the secondary side of DC-DC converters and AC-DC power supplies, and also suitable for motor applications in cordless home appliances and power tools due to high pulse current capability (Idp) up to 500A and increased maximum channel temperature of 175ºC.

Specification:

Small gate charge: QSW = 22 nC (typ.)

Small output charge: Qoss = 77.5 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10µA (max) (VDS = 60 V)

Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA)