FHP120N08D N-channel enhancement mode field effect transistor, using TO-220 packaging technology, is often used to replace faulty components.

Product parameter:

Type Designator: FHP120N08D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO-220