Product detail
Product description:
Vs3510AP P-Channel Advanced Power MOSFET The VS3510AP transistor is a P-channel MOS FET with -5V logic level control. Low on-resistance RDS(on) @ VGS is -4.5V with enhanced mode and fast switching capability. Adopt PDFN 5*6 package.
Specification:
Drain-Source breakdown voltage: -30V
Diode continuous forward current: -45A
Continuous drain current @VGS=-10V (TC=25°C): -45A
Pulse drain current tested: -180A
Avalanche energy, single pulsed: 56mJ
Maximum power dissipation: 37W
Gate-Source voltage: ±20V
Storage and operating temperature range: -55 to 150°C
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