The OSG65R069HZ 53A 650V 390W 0.069Ω MOSFET utilizes charge balancing technology to achieve low on-resistance and gate charge. It is designed to minimize conduction losses and provide excellent switching performance and strong avalanche capability. It integrates a fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to achieve higher efficiency, higher reliability, and a smaller form factor.
OSG65R069HZ SOT-247 replacement N-Channel MOSFET for Power Supply Unit PSU.
Features:
① Low RDS(on) & FOM
② Extremely low switching loss
③ Excellent stability and uniformity
④ Ultra-fast and robust body diode
Product parameters:
Package:SOT-247
Type:MOSFET
FET Type:N-Channel
Operating Temperature:-55 to +125 C
Application:Power Supply