PKCH2BB Field Effect Transistor

PKCH2BB N-channel enhancement mode field effect transistor PDFN 5x6P on T9+ hash board.

Features：

1. Pb−Free, Halogen Free and RoHS compliant.

2. Low RDS(on) to Minimize Conduction Losses.

3. Ohmic Region Good RDS(on) Ratio.

4. Optimized Gate Charge to Minimize Switching Losses.

Product parameters:

Absolute maximum ratings (TA = 25 °C )

V_(BR)DSS: 30V

V_GS: ±20V 

R_DS(ON): 0.99mΩ

Operating junction & storage temperature Range: -55 to 150°C

Continuous drain current:

T_C = 25 °C: 228A

T_C = 100 °C: 145A

Continuous drain current：

T_A = 25 °C： 50A

T_A = 70 °C： 50A

Pulsed drain current: 350A

Type designator: PKCH2BB

Type of transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (P_d): 5 W

Maximum drain-source voltage (V_ds): 30 V

Maximum gate-source voltage (V_gs): 20 V

Maximum gate-threshold voltage (V_gs(th)): 2.35 V

Maximum drain current (I_d): 50 A

Maximum junction temperature (T_j): 150 °C

Total gate charge (Q_g): 128 nC

Rise time (t_r): 49 nS

Drain-source capacitance (C_d): 1052 pF

Maximum drain-source on-state resistance (R_ds): 0.00099 Ohm