Product description:

The TP65H035G4WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm's Gen IV platform. It combines state-of-the-art high-voltage GaN HEMTs with low-voltage silicon MOSFETs to deliver exceptional reliability and performance. It uses advanced epitaxy and patented design techniques to simplify manufacturability while increasing silicon efficiency by reducing gate charge, output capacitance, crossover loss and reverse recovery charge.

Feature:

• JEDEC-compliant GaN technology

• Dynamic RDS(on)eff production test

• Robust design powered by

— Wide door safety margin

— Transient overvoltage capability

• Enhanced surge current capability

• Very low QRR

• Reduced crossover loss

Benefit:

• Support AC-DC bridgeless totem-pole PFC design

— Increased power density

— Reduce system size and weight

— Lower overall system cost

• Improves the efficiency of hard-switching and soft-switching circuits

• Easy to drive with commonly used gate drivers

• GSD pin layout improves high-speed designs