S29GL256P11TFI010

S29GL256P11TFI010 is a 256MB page mode flash memory, manufactured with 90nm MirrorBit® process technology. The device provides a fast page access time of 110ns, and the corresponding random access time is as fast as 90ns. It has a write buffer that allows up to 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.

1. Persistence and password method of advanced sector protection

2. Speed up programming time to increase throughput during system production

3. The write operation status bit indicates the completion of the programming and erasing operations

4. Secure silicon sector area-can be programmed and locked at the factory or by the customer

5. Multi-function I/O™ control