IRFH5300TRPBF field effect crystal MOS power transistor, original SMD, adopts QFN-8 packaging technology, has lower conduction loss, and achieves better heat dissipation. Environmental protection, safety, safe to use.
Product parameters:
• VDSS: 30V
• RDS(on)max(@VGs = 10V): 1.4mΩ
• Qg (Typical): 50nC
• Rg (Typical): 1.3Ω
• ID(@Tc (bottom) = 25°C): 336A
Feature:
• Low RDSon (<1.4 mΩ)
• Low PCB thermal resistance (<0.5°CW)
• 100% Rg tested
• Thin profile (<0.9mm)
• Industry standard pinouts
• Lower conduction loss
• Enables better heat dissipation
• Improved reliability
• Increased power density
• Multi-vendor compatibility
• Easier to manufacture
• Greener
• Improved reliability
Application:
• OR-ing MOSFET for 12V (typical) bus in-rush current
• Battery Powered DC Motor Inverter MOSFETs