The SLF18N50C 18A 500V MOSFET is produced using Maple semi's advanced planar stripe DMOS technology, specially designed to minimize on-resistance, provide excellent switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency switch-mode power supplies and active power factor correction based on half-bridge topologies.
This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!
Product parameters:
Model code: SLF18N50C
Transistor type: MOSFET
Control channel type: N channel
Maximum Power Consumption (Pd): 41 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum gate-source voltage |Vgs|: 30 V
Maximum Gate Threshold Voltage |Vgs(th)|: 5 V
Maximum drain current |Id|: 18 A
Maximum junction temperature (Tj): 150°C
Total Gate Charge (Qg): 69 nC
Rise Time (tr): 43.5 ns
Drain-Source Capacitance (Cd): 335 pF
Maximum drain-source on-resistance (Rds): 0.283 ohms
Package: TO220F
Features:
- 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V
- Low gate charge ( typical 69nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved DV/DT capability