S29GL128P10TFI010

S29GL128P10TFI010 is a 128MB page mode flash memory, using 90nm MirrorBit process technology. The device provides a fast page access time of 100ns, and the corresponding random access time is as fast as 90ns. It has a write buffer that allows up to 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device very suitable for today's eMBedded applications that require higher density, better performance and lower power consumption.

1. Enhanced multi-function I/O™ control

2. Secure silicon sector area

3. Typical 100,000 erase cycles per sector

4. Suspend and resume commands for programming and erasing operations

5. The write operation status bit indicates the completion of the programming and erasing operations

6. Unlock bypass program command-reduce programming time