The IPW60R070C6 600V 53A combines the experience and best-in-class innovation of a leading SJ MOSFET supplier. The device offers all the advantages of a fast-switching SJ MOSFET without sacrificing ease of use. Extremely low switching and conduction losses make switching applications more efficient, compact, lighter, and cooler.
Feature:
• Very low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation durability
• Ease of use/drive
• Lead-free plating, halogen-free
Product parameter:
Type Designator: IPW60R070C6
Marking Code: 6R070C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 391 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 53 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 170 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 215 pF
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
Package: TO247