SIRA04DP-T1-GE3 is a 30V 40A (D-S) N-channel synchronous rectification MOSFET, silk screen marked as RA04, often used in high power density DC/DC, VRM, embedded DC/DC, etc.
Product parameters:
Transistor Polarity: N-Channel
Number of channels: 1 channel
Vds - Destruction voltage between drain and source: 30V
Id - Continuous drain current: 40A
Rds On - Resistance between drain and source: 1.8mOhms
Vgs - Voltage between gate and source: -16V, +20V
Vgs th - threshold voltage between gate and source: 1.1V
Qg - Gate charge: 77nC
Working temperature: -55℃ to +150℃
Dp - Power Consumption: 62.5W