SIRA00DP

About this item
Price : $0.7
MOQ : 1 pcs
Weight : 0.001 KG
+ Add to cart
Product detail
roduct description:

Compared to conventional transistors, the SIRA00DP-T1-GE3 power MOSFET developed by Vishay is capable of fast switching between data lines while amplifying the signal itself. Its maximum power consumption is 6250 mW. The MOSFET transistor has a minimum operating temperature of -55 °C and a maximum operating temperature of 150 °C. The device is fabricated using TrenchFET technology. The N-channel MOSFET transistor operates in enhancement mode.

Transistor Polarity: N Channel

Drain-source voltage Vds : 30V

Continuous drain current Id: 100A

On-resistance Rds(on): 830 microohms

Transistor case style: PowerPAK SO

Transistor Mount: Surface Mount

Rds(on) test voltage Vgs : 10V

Threshold voltage Vgs: 2.2V

Power consumption Pd : 104W

Maximum operating temperature: 150°C




Shipping
We can support express shipping, including DHL, Fedex, TNT, UPS, EMS, etc. At the same time, we also cooperate with professional shipping companies. It can provide door-to-door shipping with customs duties. If you haven't imported before, we can help you out. Looking forward to your cooperation
What do customers buy after viewing this item?
MPFK3428
MOQ : 1 pcs
Weight : 0.001 KG
$1.3
13 Points
AM29F400B-55EI
MOQ : 1 pcs
Weight : 0.01 KG
$3.1
31 Points
STW48N60M2
MOQ : 1 pcs
Weight : 0.001 KG
$1.9
19 Points
GBP810
MOQ : 1 pcs
Weight : 0.001 KG
$0.28
2.8 Points
GP029NE4SL
MOQ : 1 pcs
Weight : 0.001 KG
$1.89
18.9 Points
2022 Minerfixes - All Rights Reserved