The IPA60R360P7S 7th generation platform is a revolutionary technology for high voltage power MOSFETs, and silk screen marked as 60S360P7, it combines the advantages of a fast switching SJ MOSFETs, very easy to use, such as very low ringing tendency, excellent robustness of body diode to hard commutation and excellent ESD capability. Additionally, extremely low switching and conduction losses make switching applications more efficient, compact, and cooler.

Product parameter:

VDS @ Tj,max: 650V

RDS(on),max: 360mΩ

Qg,typ: 13nC

ID,pulse: 26A

Eoss @ 400V: 1.6µJ

Body diode diF/dt: 900A/µs