IXFP4N85X is an 850V 3.5A X-class HiPERFET power MOSFET with N-channel enhancement mode. It adopts TO-220 package technology and is often used in power supply, DC-DC converter applications, etc.
Product parameters:
Transistor Polarity: N-Channel
Number of channels: 1 channel
Vds - Destruction voltage between drain and source: 850V
Id - Continuous drain current: 3.5A
Rds On - Resistance between drain and source: 2.5Ω
Vgs - Voltage between gate and source: -30V, +30V
Vgs th - threshold voltage between gate and source: 3V
Qg - Gate charge: 7nC
Working temperature: -55℃ to +150℃
Dp - Power Consumption: 150 W
Feature:
• Low RDS(ON) and QG
• Avalanche rated
• Low package inductance
• High power density
• Easy to install
• Save space
Application:
• Switching mode and resonant mode
• power supply
• DC-DC converters
• PFC circuit
• AC and DC motor drives
• Robotics and servo control