The IPW60R037CSFD 600V Power Transistor is a revolutionary technology MOSFET for high voltage power supplies, a segment of equipment optimized to address the charging market. Low gate charge (Qg) and improved switching behavior give it the highest efficiency. Furthermore, an integrated fast body diode and greatly reduced reverse recovery charge (Qrr) results in the highest reliability of the resonant topology. In addition, IPW60R037CSFD meets efficiency and further supports high power density solutions.
This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!
Product parameters:
Model code: IPW60R037CSFD
Marking code: 60R037CS
Transistor Type: MOSFET
Control channel type: N channel
Maximum power consumption (Pd): 245 W
Maximum drain-source voltage |Vds|: 600 V
Maximum gate-source voltage |Vgs|: 20 V
Maximum gate threshold voltage |Vgs(th)|: 4.5 V
Maximum drain current |Id|: 54 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 136 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 104 pF
Maximum drain-source on-resistance (Rds): 0.037 ohms
Package: TO247
Product features:
• Fast body diode
• Industry-leading reverse recovery fees (Qrr)
• cost optimization
• Excellent robustness and reliability in soft switching applications
• Maximum efficiency without the ease of use/performance trade-off
• Enables solutions that increase power density