PK650BA N-Channel Enhancement Mode MOSFET The PK650BA single N-Channel MOS field effect transistor has a drain-source voltage of 30V, a gate-source voltage of ±20V, and a maximum drain-source on-resistance of 3.3mΩ. At TC = 25 °C, the continuous drain current is 70A and the power dissipation is 31W. The operating junction and storage temperature range is -55°C to 150°C. It is an efficient maintenance spare part for the repair and replacement of MOS chips for the Antminer power supply.